This paper presents an experimental and theoretical study on the impact of doping and recombination mechanisms on quantum dot\nsolar cells based on the InAs/GaAs system. Numerical simulations are built on a hybrid approach that includes the quantum features\nof the charge transfer processes between the nanostructured material and the bulk host material in a classical transport model of the\nmacroscopic continuum. This allows gaining a detailed understanding of the several physical mechanisms affecting the photovoltaic\nconversion efficiency and provides a quantitatively accurate picture of real devices at a reasonable computational cost.\nExperimental results demonstrate that QD doping provides a remarkable increase of the solar cell open-circuit voltage, which is\nexplained by the numerical simulations as the result of reduced recombination loss through quantum dots and defects.
Loading....